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SKB15N60HS
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High Speed IGBT in NPT-technology
C
* 30% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for operation above 30 kHz * NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution * * * * High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 15A Eoff 200J Tj 150C Marking K15N60HS Package P-TO-220-3-45
P-TO-220-3-45
G
E
Type SKB15N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C
Symbol VCE IC
Value 600 27 15
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature (reflow soldering, MSL1)
2)
ICpul s IF
60 60
40 20 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 80 20 30 10 138 -55...+150 175 220 V s W C
VGE = 15V, VCC 400V, Tj 150C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev 2.2 June 06
Power Semiconductors
SKB15N60HS
^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
Symbol RthJC RthJCD RthJA RthJA
Conditions
Max. Value 0.9 1.7 62 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 1 5 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A 10 40 2000 100 nA S 3 1.5 1.5 4 2.0 2.0 5 A 2.8 3.5 3.15 4.00 600 V Symbol Conditions Value min. Typ. max. Unit
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air.
1)
2
Power Semiconductors
2
Rev 2.2
June 06
SKB15N60HS
^ Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V
-
810 123 51 80 7 135
pF
nC nH A
V G E = 15 V ,t S C 10 s V C C 4 0 0 V, T j 1 5 0 C
-
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 1 5 A, d i F / d t =9 8 0 A/ s 111 27 83 580 14 520 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 23 2) L = 60 n H, 2) C = 40 pF Energy losses include "tail" and diode reverse recovery. 13 14 209 15 0.32 0.21 0.53 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a nd Stray capacity C due to test circuit in Figure E. 3 Rev 2.2 June 06
Power Semiconductors
SKB15N60HS
^ Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 4 00 V , I F = 1 5 A, d i F / d t =1 0 70 A / s 184 30 155 1320 18 360 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 3 .6 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. T j =1 5 0 C V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 2 3 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. 11 6 72 26 0.38 0.20 0.58 12 15 235 17 0.48 0.30 0.78 mJ ns mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to test circuit in Figure E.
Power Semiconductors
4
Rev 2.2
June 06
SKB15N60HS
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tP=5s
60A
8s
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 10Hz
IC, COLLECTOR CURRENT
TC=80C
15s 10A 50s 200s 1A 1ms
TC=110C
Ic
Ic
0,1A 1V
DC
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
140W 120W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100W 80W 60W 40W 20W 0W 25C
20A
10A
50C
75C
100C
125C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
5
Rev 2.2
June 06
SKB15N60HS
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40A
VGE=20V 15V
40A
VGE=20V 15V
IC, COLLECTOR CURRENT
30A
13V 11V 9V
IC, COLLECTOR CURRENT
30A
13V 11V 9V
20A
7V 5V
20A
7V 5V
10A
10A
0A 0V 2V 4V 6V
0A 0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
T J=-55C 40A 25C 150C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C 150C IC=7.5A IC=15A IC=30A
IC, COLLECTOR CURRENT
20A
0A
0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev 2.2
June 06
SKB15N60HS
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td(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
tf
100 ns td(off) tf td(on) 10 ns tr
10ns
td(on) tr
1ns
0A
10A
20A
1 ns
0
10
20
30
40
50
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
5.0V 4.5V max. 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V -50C min. typ.
t, SWITCHING TIMES
100ns
tf tr td(on) 0C 50C 100C 150C
10ns
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=15A, RG=23, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.5mA)
Power Semiconductors
7
Rev 2.2
June 06
SKB15N60HS
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*) Eon include losses due to diode recovery
*) Eon include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2,0mJ Ets*
Ets* 1,0 mJ
Eon* 1,0mJ
Eon* 0,5 mJ Eoff
Eoff
0,0mJ
0A
10A
20A
30A
0,0 mJ
0
10
20
30
40
50
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
*) Eon include losses due to diode recovery
10 K/W D=0.5 0.2 10 K/W
-1
0
E, SWITCHING ENERGY LOSSES
0.75mJ
0.1 0.05 0.02
0.50mJ
Ets*
10 K/W
-2
0.01
R,(1/W) 0.5321 0.2047 0.1304 0.0027
R1
, (s) 0.04968 2.58*10-3 2.54*10-4 3.06*10-4
R2
Eon* 0.25mJ Eoff
10 K/W single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2
-3
0.00mJ 0C
50C
100C
150C
10 K/W 1s
-4
10s
100s
1m s
10m s
100m s
1s
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=20A, RG=23, Dynamic test circuit in Figure E)
tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
8
Rev 2.2
June 06
SKB15N60HS
^
VGE, GATE-EMITTER VOLTAGE
1nF
15V
Ciss
120V 10V
480V
c, CAPACITANCE
Coss 100pF Crss
5V
0V
0nC
20nC
40nC
60nC
80nC
100nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
10V 11V 12V 13V 14V
tSC, SHORT CIRCUIT WITHSTAND TIME
250A
15s
200A
10s
150A
100A
5s
50A
0s
0A
10V
12V
14V
16V
18V
VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
Power Semiconductors
9
Rev 2.2
June 06
SKB15N60HS
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400ns
Qrr, REVERSE RECOVERY CHARGE
IF=30A
1,5C
trr, REVERSE RECOVERY TIME
300ns
IF=15A
1,0C
IF=30A
200ns
IF=7.5A
0,5C
IF=15A IF=7.5A
100ns 200A/s
0,0C
400A/s
600A/s
800A/s
200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
IF=30A
Irr, REVERSE RECOVERY CURRENT
15A
IF=15A
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
-300A/s
IF=7.5A
10A
-200A/s
5A
-100A/s
0A
200A/s
400A/s
600A/s
800A/s
-0A/s
200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev 2.2
June 06
SKB15N60HS
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TJ=-55C 25C 150C
2.0V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.8V
20A
IF=30A
1.6V
10A
1.4V
IF=15A
1.2V IF=7.5A
0A
0,0V
0,5V
1,0V
1,5V
1.0V -50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJC, TRANSIENT THERMAL RESISTANCE
0
K/W
D=0.5
0.2 0.1 0.05
1
K/W 0.02 0.01 single pulse
R,(1/W) 0.311 0.271 0.221 0.584 0.314
R1
, (s) 7.83*10-2 1.21*10-2 1.36*10-3 1.53*10-4 2.50*10-5
R2
C 1= 1/R 1
C 2 = 2 /R 2
2
tP, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D=tP/T)
K/W 1s
10s
100s
1m s
10m s
100m s
1s
Power Semiconductors
11
Rev 2.2
June 06
SKB15N60HS
^
P-TO220-3-45
Power Semiconductors
12
Rev 2.2
June 06
SKB15N60HS
^
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH an d Stray capacity C =40pF.
Published by
Power Semiconductors
13
Rev 2.2
June 06
SKB15N60HS
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Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 6/8/06. All Rights Reserved. Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev 2.2
June 06

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